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| Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prufspannung insulation test voltage tP = 1 ms TC = 80 C TC = 25 C tP = 1 ms, TC = 80C VCES IC,nom. IC ICRM 1200 200 420 400 V A A A TC=25C, Transistor Ptot 1,3 kW VGES +/- 20V V IF 200 A IFRM 400 A VR = 0V, t p = 10ms, T Vj = 125C 2 It - kA2s RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazitat input capacitance Ruckwirkungskapazitat reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 200A, V GE = 15V, Tvj = 25C IC = 200A, V GE = 15V, Tvj = 125C IC = 8mA, V CE = VGE, Tvj = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 V V 6,5 V VGE = -15V...+15V QG - - - C f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 13 - nF f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V VCE = 1200V, V GE = 0V, Tvj = 25C VCE = 1200V, V GE = 0V, Tvj = 125C VCE = 0V, V GE = 20V, Tvj = 25C Cres ICES - 0,02 0,5 - 0,5 nF mA mA IGES - 400 nA prepared by: Mark Munzer approved by: Jens Thurau date of publication: 02.12.1998 revision: 1a 1(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) IC = 200A, V CE = 600V VGE = 15V, RG = 4,7, Tvj = 25C VGE = 15V, RG = 4,7, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) IC = 200A, V CE = 600V VGE = 15V, RG = 4,7, Tvj = 25C VGE = 15V, RG = 4,7, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) IC = 200A, V CE = 600V VGE = 15V, RG = 4,7, Tvj = 25C VGE = 15V, RG = 4,7, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) IC = 200A, V CE = 600V VGE = 15V, RG = 4,7, Tvj = 25C VGE = 15V, RG = 4,7, Tvj = 125C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschluverhalten SC Data Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip TC=25C IC = 200A, V CE = 600V, V GE = 15V RG = 4,7, Tvj = 125C, LS = 60nH IC = 200A, V CE = 600V, V GE = 15V RG = 4,7, Tvj = 125C, LS = 60nH tP 10sec, V GE 15V, R G = 4,7 TVj125C, V CC=900V, V CEmax=VCES -LsCE *dI/dt ISC LsCE 1250 25 A nH Eoff 23 mWs Eon 22 mWs tf 0,04 0,05 s s td,off 0,57 0,57 s s tr 0,05 0,07 s s td,on 0,05 0,06 s s min. typ. max. RCC`+EE` - 0,60 - m Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage Ruckstromspitze peak reverse recovery current IF = 200A, V GE = 0V, Tvj = 25C IF = 200A, V GE = 0V, Tvj = 125C IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Sperrverzogerungsladung recovered charge IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Abschaltenergie pro Puls reverse recovery energy IF = 200A, - di F/dt = 4000A/sec VR = 600V, VGE = -15V, T vj = 25C VR = 600V, VGE = -15V, T vj = 125C Erec 6 14 mWs mWs Qr 23 42 As As IRM 240 300 A A VF min. - typ. 1,8 1,7 max. 2,3 V V 2(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. Innerer Warmewiderstand thermal resistance, junction to case Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = 1 W/m * K / grease = 1 W/m * K RthCK RthJC - typ. 0,01 max. 0,09 0,18 K/W K/W K/W Tvj - - 150 C Top -40 - 125 C Tstg -40 - 150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Gewicht weight terminals M6 M1 3 AL2O3 20 mm 11 mm 275 6 Nm M2 2,5 5 Nm G 420 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V vorlaufige Daten preliminary data 400 350 Tj = 25C 300 250 Tj = 125C IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 400 350 VGE = 17V IC = f (VCE) T vj = 125C 300 250 VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V IC [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 400 350 Tj = 25C 300 250 Tj = 125C IC [A] 200 150 100 50 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 400 350 Tj = 25C IF = f (VF) 300 250 Tj = 125C IF [A] 200 150 100 50 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, Rgon = Rgoff =4,7 , VCE = 600V, T j = 125C 100 90 80 70 E [mJ] 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 Eoff Eon Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 100 90 80 70 60 E [mJ] 50 40 30 20 10 0 0 4 8 12 Eoff Eon Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 200A , V CE = 600V , T j = 125C 16 20 24 28 32 RG [] 6(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) preliminary data 1 0,1 ZthJC [K / W] 0,01 Zth:Diode Zth:IGBT 0,001 0,001 0,01 0,1 1 10 100 t [sec] i ri [K/kW] : IGBT i [sec] : IGBT ri [K/kW] : Diode i [sec] : Diode 1 40,08 0,006 49,13 0,006 2 30,51 0,029 73,21 0,035 3 19,37 0,043 37,92 0,033 4 0,04 1,014 19,74 0,997 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 450 400 350 300 VGE = 15V, R g = 4,7 Ohm, T vj= 125C IC [A] 250 200 150 100 50 0 0 IC,Modul IC,Chip 200 400 600 800 1000 1200 1400 VCE [V] 7(8) DB_BSM200GB120DLC.xls Technische Information / Technical Information IGBT-Module IGBT-Modules BSM200GB120DLC vorlaufige Daten preliminary data 8(8) DB_BSM200GB120DLC.xls |
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